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MRF89XAM9A
915 MHz Ultra Low-Power Sub-GHz Transceiver Module
Features
? Module designed from the MRF89XA Integrated
Ultra Low-Power, Sub-GHz Transceiver IC.
? Supports MiWi? Development Environment
Proprietary Wireless Networking Protocols
? 4-Wire Serial Peripheral Interface (SPI) with
Interrupts
? Small Size: 0.7" x 1.1" (17.8 mm x 27.9 mm),
Surface Mountable – Pin compatible with
MRF89XAM8A
? Integrated Crystal, Internal Voltage Regulator,
Matching Circuitry and Printed Circuit Board
(PCB) Antenna
? Easy Integration into Final Product – Minimize
Product Development, Quicker Time to Market
? Compatible with Microchip’s Microcontroller
Families (PIC16, PIC18, PIC24, dsPIC33 and
PIC32)
? Modular Device Approval for United States (FCC),
Canada (IC) and Radio Regulation Certified for
Australia/New Zealand (C-TICK)
Operational
? Operating Voltage: 2.1–3.6V (3.3V typical)
? Temperature Range: -40°C to +85°C Industrial
? Low-Current Consumption:
- Rx mode: 3 mA (typical)
- Tx mode: 25 mA at +10 dBm (typical)
- Sleep: 0.1 μA (typical)
Pin diagram
RF/Analog Features
? ISM Band 902–928 MHz Operation
? Modulation: FSK and OOK
? Data Rate:
- FSK: 200 kbps
- OOK: 28 kbps
? Reception sensitivity
- FSK: -105 dBm (typical) at 25 kbps
- OOK: -111 dBm (typical) at 2 kbps
? +10 dBm Typical Output Power with 21 dB Tx
Power Control Range
Media Access Controller (MAC)/
Baseband Features
? Packet handling feature with data whitening and
automatic CRC generation
? Incoming sync word (pattern) recognition
? Built-in bit synchronizer for incoming data, and clock
synchronization and recovery
? 64-byte transmit/receive FIFO with preload in Stand-by
mode
? Supports Manchester encoding/decoding
techniques
? 2011 Microchip Technology Inc.
GND
RESET
CSCON
IRQ0
SDI
SCK
1
2
3
4
5
6
Preliminary
12
11
10
9
8
7
GND
GND
V IN
IRQ1
CSDATA
SDO
DS75017A-page 1
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相关代理商/技术参数
MRF89XAM9AT-I/RM 制造商:Microchip Technology Inc 功能描述:915 MHz Ultra Low-Power Sub-GHz Transceiver Module
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MRF8HP21080HR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780H-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HSR3 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF8HP21080HSR5 功能描述:射频MOSFET电源晶体管 HV8 2.1GHZ 160W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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